sop8 plastic-encapsulate mosfets cj q 4953 p-channel 30-v(d-s) mosfet equivalent circuit maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -30 gate-source voltage v gs 20 v continuous drain current ( t 10s) i d - 5 a power dissipation ( t 10s) p d 1.25 w thermal resistance from junction to ambient ( t 10s) r ja 100 /w junction temperature t j 150 storage temperature t stg -55~+150 sop8 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static drain-source breakdown voltage v (br)dss v gs =0v, i d =-250a -30 v gate-threshold voltage v gs(th) v ds =v gs , i d =-250a -1.0 v gate-body leakage i gss v ds =0v, v gs =20v 100 na zero gate voltage drain current i dss v ds =-30v, v gs =0v -1 a v gs =-10v, i d =-4.9a 60 drain-source on-resistance a r ds(on ) v gs =-4.5v, i d =-3.7a 90 m ? forward transconductance a g fs v ds =-10v, i d =-4.9a 6.0 s diode forward voltage a v sd i s =-1.7a,v gs =0v -1.2 v dynamic b total gate charge q g 25 gate-source charge q gs 4 gate-drain charge q gd v ds =-15v,v gs =-10v,i d =-4.9a 2 nc turn-on delay time t d (on) 15 rise time t r 20 turn-off delay time t d(off) 80 fall time t f v dd =-15v,r l =15 ? , i d -1a, v gen =-10v,r g =6 ? 40 ns notes : a. pulse test : pulse width 300s, duty cycle 2%. b. guaranteed by design, not su bject to production testing. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1e-5 -1e-4 -1e-3 -0.01 -0.1 -1 -10 -0 -1 -2 -3 -4 -0 -1 -2 -3 -4 -5 -0 -2 -4 -6 -8 -10 20 40 60 80 100 -2 -4 -6 -8 -10 20 40 60 80 100 120 140 -0 -1 -2 -3 -4 -5 -0 -5 -10 -15 -20 -25 t a =25 pulsed t a =25 pulsed i s ?? v sd t a =25 pulsed source current i s (a) source to drain voltage v sd (v) t a =25 pulsed t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) v gs =-4.5v v gs =-10v i d ?? r ds(on) on-resistance r ds(on) (m ) drain current i d (a) cj q 4953 v gs ?? r ds(on) i d =-4.3a on-resistance r ds(on) (m ) gate to source voltage v gs (v) -10v -8v -5v v gs =-4.5v v gs =-4.0v v gs =-3.5v output characteristics drain current i d (a) drain to source voltage v ds (v) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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